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| SD57030 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 30 W WITH 13 dB gain @ 945 MHz * BeO FREE PACKAGE M243 (Epoxy Sealed) ORDER CODE SD57030 BRANDING TSD57030 DESCRIPTION The SD57030 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25C) Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M) Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 65 + 20 4 74 200 -65 to + 200 Unit V V V A W C C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.75 C/W 1/7 March, 24 2003 SD57030 ELECTRICAL SPECIFICATION (TCASE = 25C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 10 mA VDS = 28 V VDS = 0 V ID = 50 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 1.3 1.8 58 34 2.7 Min. 65 1 1 5.0 Typ. Max. Unit V A A V V mho pF pF pF Ref. 7143417B DYNAMIC Symbol POUT GPS D Load mismatch VDD = 28 V VDD = 28 V VDD = 28 V Test Conditions IDQ = 50 mA IDQ = 50 mA IDQ = 50 mA POUT = 30 W POUT = 30 W POUT = 28 W f = 945 MHz f = 945 MHz f = 945 MHz f = 945 MHz Min. 30 13 50 10:1 15 60 Typ. Max. Unit W dB % VSWR VDD = 28 V IDQ = 50 mA ALL PHASE ANGLES 2/7 SD57030 TYPICAL PERFORMANCE (CW) Output Power vs. Input Power Power Gain and Efficiency vs. Output Power 40 Pout, OUTPUT POWER (W) Gp, POWER GAIN (dB) 21 18 15 12 9 6 3 0 0 5 10 15 20 25 30 Pout, OUTPUT POWER (W) f= 945 MHz Vdd= 28 V Idq= 50 mA Gain Eff 70 60 50 40 30 20 10 0 35 40 Nd, DRAIN EFFICIENCY (%) 30 20 10 f= 945 MHz Vdd= 28 V Idq= 50 mA 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Pin, INPUT POW ER (W ) Output Power vs. Gate Source Voltage Output Power vs. Supply Voltage 35 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 30 25 20 15 10 5 0 -5 -4 -3 -2 -1 0 1 2 3 4 Vgs, GATE-SOURCE VOLTAGE (V) f= 945 MHz Vdd= 28 V Idq= 50 mA 35 Pin= .84 W 30 25 f= 945 MHz Idq= 50 mA Pin= .47 W 20 15 Pin= .24 W 10 5 0 8 12 16 20 24 28 32 VDD, SUPPLY VOLTAGE (V) 3/7 SD57030 TEST CIRCUIT SCHEMATIC VGG + + + + VD D RF IN RF OUT NOTES: 1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINE = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] TYP. 3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES. TEST CIRCUIT COMPONENT PART LIST COMPONENT C19 C18, C14 C17 C16, C12, C11,C1 C15 C13 C9, C2 C8 C7, C6, C5 ,C4 C3 R3 R2 R1 FB2, FB1 L2, L1 PCB DESCRIPTION 200 F / 63V ALLUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR 0.1 F / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 F / 50V ALUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR 100 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8.0 pF GIGA TRIM VARIABLE CAPACITOR 6.2 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 3 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 120 0-IM, 2W SURFACE MOUNT CERAMIC CHIP CAPACITOR 4.7 M OHM 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR 18 K OHM, 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR SHIELD BEAD SURFACE MOUNT EMI INDUCTOR, 5 TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE WOVEN FIBERGLASS REINFORCED PTFE 0.080'' THK, r=2.55, 2 Oz EDCu BOTH SIDE 4/7 SD57030 TEST CIRCUIT SD57030 TEST CIRCUIT PHOTOMASTER SD57030 6.4 inches 4 inches 5/7 SD57030 M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA mm Inch MAX 5.72 6.48 6.10 14.27 20.07 8.89 0.10 3.18 1.83 1.27 20.57 9.40 0.15 4.45 2.24 1.78 0.790 0.350 0.004 0.125 0.072 0.050 MIN. 0.205 0.215 0.220 0.562 0.810 0.370 0.006 0.175 0.088 0.070 TYP. MAX 0.225 0.255 0.240 DIM. A B C D E F G H I J MIN. 5.21 5.46 5.59 TYP. Controlling dimension: Inches 1022142E 6/7 SD57030 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7 |
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